DESCRIPTION
Power MOSFET The UTC T he UTC UT T200N02 is genera lly applied in s ynchronous Rectification or DC to DC convertor. FEATURES
* VDS = 20V * ID= 200A * RDS(ON)=2.0mΩ(Typ.) @ VGS=10V * Low Gate Charge (Typical 84nC) * High Switching Speed * High Power and Current Handling Capability * RoHS Compliant SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Package TO-220 1 G Pin Assignment 2 3 D S Packing Tube Ordering Number Lead Free Halogen Free UTT200N02L-TA3-T UT T200N02G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-576.a UTT200N02 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) UNIT PARAMETER SYMBOL RATINGS Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±20 V Continuous (Silicon Limited) ID 200 (Note 2) A Drain Current Pulsed (Note 3) IDM 800 A Single Pulsed Avalanche Energy (Note 4) EAS 864 mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 6.0 V/ns Power Dissipation 214 W PD Derate above 25°C 1.43 W /°C Junction Temperature TJ + 150 °C Storage Temperature Range TSTG -55~ +175 °C Note: 1.
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