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UTT2N10-H - 100V HEXFET POWER MOSFET

General Description

The UTC UTT2N10-H is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and low gate charge.

The UTC UTT2N10-H is suitable for Load/system switch.

Key Features

  • RDS(ON) ≤ 220 mΩ @ VGS=10V, ID=1.6A RDS(ON) ≤ 235 mΩ @ VGS=4.5V, ID=1.3A.
  • High switching speed.
  • Low gate charge.
  • SYMBOL.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTT2N10-H 2.0A, 100V HEXFET POWER MOSFET POWER MOSFET  DESCRIPTION The UTC UTT2N10-H is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and low gate charge. The UTC UTT2N10-H is suitable for Load/system switch.  FEATURES * RDS(ON) ≤ 220 mΩ @ VGS=10V, ID=1.6A RDS(ON) ≤ 235 mΩ @ VGS=4.5V, ID=1.