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UTT50N06M - N-CHANNEL MOSFET

Datasheet Summary

Description

The UTC UTT50N06M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

Features

  • RDS(ON) ≤ 12 mΩ @ VGS=10V, ID=25A RDS(ON) ≤ 15 mΩ @ VGS=4.5V, ID=20A.
  • High Cell Density Trench Technology.
  • High Power and Current Handling Capability.
  • SYMBOL www. unisonic. com. tw Copyright © 2022 Unisonic Technologies Co. , Ltd 1 of 9 QW-R209-223.J UTT50N06M Power MOSFET.

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Datasheet Details

Part number UTT50N06M
Manufacturer UTC
File Size 677.89 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet UTT50N06M Datasheet
Additional preview pages of the UTT50N06M datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UTT50N06M 50A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET  DESCRIPTION The UTC UTT50N06M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC UTT50N06M is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.  FEATURES * RDS(ON) ≤ 12 mΩ @ VGS=10V, ID=25A RDS(ON) ≤ 15 mΩ @ VGS=4.5V, ID=20A * High Cell Density Trench Technology * High Power and Current Handling Capability  SYMBOL www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 9 QW-R209-223.
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