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UTT75N08M Datasheet PDF

Unisonic Technologies UTT75N08M

UTT75N08M is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT75N08M is suitable for DC-DC converters, Off-Line UPS, High Voltage Synchronous Rectifier, Primary Switch for 48V and 24V Systems, etc.
Part No. UTT75N08M
Datasheet UTT75N08M Download
Manufacturer
Unisonic Technologies
Description N-CHANNEL MOSFET
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UTT75N08M datasheet page 1 preview

DESCRIPTION

The UTC
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FEATURES

* RDS(ON < 11 mΩ @ VGS=10V, ID=75A * High Switching Speed * High Current Capacity
● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT75N08ML-TA3-T UTT75N08MG-TA3-T UTT75N08ML-TC3-T UTT75N08MG-TC3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-230 Pin Assignment 123 GDS GDS Packing Tube Tube
● MARKING Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-100.c UTT75N08M Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS

(TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous Pulsed (Note 2) ID IDM 75 300 A A Single Pulsed Avalanche Energy (Note 3) EAS 125 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-220 TO-230 PD 125 W 167 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
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