UV1404R - 190A 40V N-Channel MOSFET

Datasheet Summary

Description

The UV1404R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Features

VDS=40V；ID=190A@ VGS =10V； RDS(ON)< 4 m Ω @ VGS =10V.
Special process technology for high ESD capability.
Special designed for Convertors and power controls.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation TO-220-3L top view.

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UV1404R 190A 40V N-Channel MOSFET by UVSEMI - Datasheet Preview — Datasheet preview – UV1404R

Datasheet Details

Part number	UV1404R
Manufacturer	UVSEMI
File Size	1.68 MB
Description	190A 40V N-Channel MOSFET
Datasheet	UV1404R Datasheet
Additional preview pages of the UV1404R datasheet.

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UV1404R 190A 40V N-Channel MOSFET N-Channel Enhancement Mode Power MOSFET General Description The UV1404R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

Published: Apr 8, 2018 |