90N03AT - 30V N-Channel Trench MOSFET

Unigroup

Key Features

Trench Power Technology.
Low RDS(ON).
Low Gate Charge.
Optimized for Fast-switching.

90N03AT 30v n-channel trench mosfet by Unigroup - Datasheet Preview

Datasheet Details

Part number	90N03AT
Manufacturer	Unigroup
File Size	399.76 KB
Description	30V N-Channel Trench MOSFET
Datasheet	90N03AT Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
90N03	Power-Transistor	Tuofeng Semiconductor
90N03L	Power-Transistor	Tuofeng Semiconductor
90N03S	N-Channel 30V MOSFET	VBsemi
90N10F7	N-Channel MOSFET	STMicroelectronics
90N15	N-Channel MOSFET	IXYS

Other Datasheets by Unigroup

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TTG90N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) Features  Trench Power Technology  Low RDS(ON)  Low Gate Charge  Optimized for Fast-switching Applications Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial DFN5x6 D D D D Product Summary VDS RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) ID (at VGS=10V) 100% UIS Tested 30V < 5mΩ < 7mΩ 90A G S S S Device TTG90N03AT Package DFN5x6 Marking 90N03AT Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage (VGS = 0V) Continuous Drain Current B Pulsed Drain Current A TC = 25ºC TC = 100ºC Gate-Source Voltage Single Pulse Avalanche Energy L =0.