TET45L40B - Integrated Gate Turn-off (IGTO) Thyristor

Datasheet Summary

Features

High snubberless turn-off (4000A) capability.
Suitable for high frequency (>1kHz) operation.
Low gate drive power consumption.
Built-in over-current protection.
Optical trigger input and status feedback.
Suitable for series and parallel operation Product Summary VDRM ITGQM ITSM VT0 VDclink 4500V 4000A 25kA 1.2V 2800V Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Rep. Peak Off-state Voltage Long Term DC Voltage V.

Unigroup

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Datasheet Details

Part number	TET45L40B
Manufacturer	Unigroup
File Size	321.78 KB
Description	Integrated Gate Turn-off (IGTO) Thyristor
Datasheet	TET45L40B Datasheet
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TET45L40B Wuxi Unigroup Microelectronics Company Integrated Gate Turn-off (IGTO) Thyristor FEATURES  High snubberless turn-off (4000A) capability  Suitable for high frequency (>1kHz) operation  Low gate drive power consumption  Built-in over-current protection  Optical trigger input and status feedback  Suitable for series and parallel operation Product Summary VDRM ITGQM ITSM VT0 VDclink 4500V 4000A 25kA 1.2V 2800V Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Rep. Peak Off-state Voltage Long Term DC Voltage VDRM VDclink Gate Unit Energized Ambient Cosmic Radiation at Sea Level in Open Air. Gate Unit Energized Rep.

Published: Apr 25, 2019 |