TMB120N10A - 100V N-Channel Trench MOSFET

Datasheet Summary

Features

High Density Cell Design for Ultra Low Rdson.
Fully Characterized Avalanche Voltage and Current.
Good Stability with High EAS.
Excellent Package for Good Heat Dissipation.

Unigroup

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Datasheet Details

Part number	TMB120N10A
Manufacturer	Unigroup
File Size	374.20 KB
Description	100V N-Channel Trench MOSFET
Datasheet	TMB120N10A Datasheet
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TMB120N10A Wuxi Unigroup Microelectronics Company 100V N-Channel Trench MOSFET FEATURES  High Density Cell Design for Ultra Low Rdson  Fully Characterized Avalanche Voltage and Current  Good Stability with High EAS  Excellent Package for Good Heat Dissipation APPLICATIONS  Power Switching Application  Hard Switched and High Frequency Circuits  Uninterruptible Power Supply Device Marking and Package Information Device Package TMB120N10A TO-263 Marking 120N10A Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range (note1) (note2) (n

Published: Apr 25, 2019 |