TMB120N10A
TMB120N10A is 100V N-Channel Trench MOSFET manufactured by Unigroup.
FEATURES
- High Density Cell Design for Ultra Low Rdson
- Fully Characterized Avalanche Voltage and Current
- Good Stability with High EAS
- Excellent Package for Good Heat Dissipation
APPLICATIONS
- Power Switching Application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
Device Marking and Package Information
Device
Package
TO-263
Marking 120N10A
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range
(note1)
(note2) (note1)
VDSS ID IDM
VGSS EAS IAR PD TJ, Tstg
Value
100 110 440 ±20 1000 60 208 -55~+175
Unit
V A A V m J A W ºC
Thermal Resistance
Parameter
Thermal Resistance, Junction-to-Case...
