TPB65R075DFD
TPB65R075DFD is 650V Super-junction Power MOSFET manufactured by Unigroup.
Description
650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, munication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by Wuxi Unigroup Microelectronics pany
Features l Ultra-fast body diode l Very low FOM RDS(on)×Qg l Easy to use/drive l 100% avalanche tested l Ro HS pliant
TO-263
TO-220
Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) l LLC Half-bridge l Charger
TO-247
Device Marking and Package Information
Device
Package
TO-263
TPP65R075DFD
TO-220
TPW65R075DFD
TO-247
Key Performance Parameters
Parameter
Value
VDS @ Tj,max RDS(on),max
700 0.075
Qg,typ ID ID,pulse EOSS @ 400V trr Qrr
81 45 135 10.29 176 1.4
Irrm
V1.0
Marking 65R075DFD 65R075DFD 65R075DFD
Unit V Ω n C A A μJ ns μC A
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TPB65R075DFD,TPP65R075DFD,TPW65R075DFD Wuxi Unigroup Microelectronics Co.,Ltd
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Continuous Drain Current Pulsed Drain Current
TC = 25ºC TC = 100ºC
Gate-Source Voltage
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
MOSFET dv/dt Ruggedness, VDS =...
