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TPB65R090M Datasheet PDF

Unigroup TPB65R090M

The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by Wuxi Unigroup Microelectronics Company.
Part No. TPB65R090M
Datasheet TPB65R090M Download
Manufacturer
Unigroup
Description 650V Super-junction Power MOSFET
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TPB65R090M datasheet page 1 preview

DESCRIPTION

650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs,designed according to the SJ principle.

FEATURES

l Very low FOM RDS(on)×Qg l 100% avalanche tested l Easy to use/drive l RoHS compliant

APPLICATIONS

l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) l Charger TO-220F TO-263 TO-3PN TO-247 Device Marking and Package Information Device Package TPA65R090M TO-220F TPB65R090M TO-263 TPV65R090M TO-3PN TPW65R090M TO-247 Key Performance Parameters Parameter Value VDS @ Tj,max RDS(on),max Qg,typ ID ID,pulse EOSS @ 400V Body Diode diF/dt 700 0.09 75 47 141 9.53 500 Marking 65R090M 65R090M 65R090M 65R090M Unit V Ω nC A A μJ A/μs V1.0 1 TPA65R090M,TPB65R090M,TPV65R090M,TPW65R090M Wuxi Unigroup Microelectronics Co.,Ltd

ABSOLUTE MAXIMUM RATINGS

TC = 25ºC, unless otherwise noted Parameter Symbol Continuous Drain Current Pulsed Drain Current TC = 25ºC TC = 100ºC Gate-S...
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