TPB65R520D Datasheet PDF

Unigroup TPB65R520D

The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by Wuxi Unigroup Microelectronics Company.

Part No.	TPB65R520D
Datasheet	TPB65R520D Download
Manufacturer	Unigroup
Description	650V Super-junction Power MOSFET
Buy	Stock & Price

DESCRIPTION

650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ principle.

FEATURES

l Very low FOM RDS(on)×Qg l 100% avalanche tested l Easy to use/drive l RoHS compliant

APPLICATIONS

l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) l Charger TO-220F TO-263 TO-252 Device Marking and Package Information Device Package TPA65R520D TO-220F TPB65R520D TO-263 TPD65R520D TO-252 Key Performance Parameters Parameter Value VDS @ Tj,max 700 RDS(on),max 0.52 Qg,typ 12.5 ID 7 ID,pulse 21 EOSS @ 400V 1.66 Marking 65R520D 65R520D 65R520D Unit V Ω nC A A μJ V1.0 1 TPA65R520D,TPB65R520D,TPD65R520D Wuxi Unigroup Microelectronics Co.,Ltd

ABSOLUTE MAXIMUM RATINGS

TC = 25ºC, unless otherwise noted Parameter Symbol TC = 25ºC Continuous Drain Current ID TC = 100ºC Pulsed Drain Current (note1) ID,pulse Gate-Source Voltage VGSS Single Pulse Avalanche Energy (n...