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TPB65R950M Datasheet PDF

Unigroup TPB65R950M

The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by Wuxi Unigroup Microelectronics Company.
Part No. TPB65R950M
Datasheet TPB65R950M Download
Manufacturer
Unigroup
Description 650V Super-junction Power MOSFET
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TPB65R950M datasheet page 1 preview

DESCRIPTION

650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs,designed according to the SJ principle.

FEATURES

l Very low FOM RDS(on)×Qg l 100% avalanche tested l Easy to use/drive l RoHS compliant

APPLICATIONS

l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) l Charger TO-220F TO-263 TO-252 Device Marking and Package Information Device Package TPA65R950M TO-220F TPB65R950M TO-263 TPD65R950M TO-252 Key Performance Parameters Parameter Value VDS @ Tj,max RDS(on),max 700 0.95 Qg,typ 9.6 ID 4.5 ID,pulse 13.5 EOSS @ 400V Body Diode diF/dt 1.04 500 Marking 65R950M 65R950M 65R950M Unit V Ω nC A A μJ A/μs V1.0 1 TPA65R950M,TPB65R950M,TPD65R950M Wuxi Unigroup Microelectronics Co.,Ltd

ABSOLUTE MAXIMUM RATINGS

TC = 25ºC, unless otherwise noted Parameter Symbol TC = 25ºC Continuous Drain Current ID TC = 100ºC Pulsed Drain Current (note1) ID,pulse Gate-Source Voltage VGSS Si...
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