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TPB80R180M Datasheet PDF

Unigroup TPB80R180M

The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by Wuxi Unigroup Microelectronics Company.
Part No. TPB80R180M
Datasheet TPB80R180M Download
Manufacturer
Unigroup
Description 800V Super-junction Power MOSFET
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TPB80R180M datasheet page 1 preview

DESCRIPTION

800V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs,designed according to the SJ principle.

FEATURES

l Very low FOM RDS(on)×Qg l 100% avalanche tested l Easy to use/drive l RoHS compliant

APPLICATIONS

l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) l Low Power Chargers and Adapters TO-220F TO-263 TO-247 Device Marking and Package Information Device Package TPA80R180M TO-220F TPB80R180M TO-263 TPW80R180M TO-247 Key Performance Parameters Parameter Value VDS @ Tj,max 850 RDS(on),max 0.18 Qg,typ 54.9 ID 23 ID,pulse 69 EOSS @ 400V 4.95 Body Diode diF/dt 500 V1.0 1 Marking 80R180M 80R180M 80R180M Unit V Ω nC A A μJ A/μs TPA80R180M,TPB80R180M,TPW80R180M Wuxi Unigroup Microelectronics Co.,Ltd

ABSOLUTE MAXIMUM RATINGS

TC = 25ºC, unless otherwise noted Parameter Symbol TC = 25ºC Continuous Drain Current ID TC = 100ºC Pulsed Drain Current (note1) ID,pulse Gate-...
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