TPD80R900M Datasheet | Unigroup

Description 800V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, munication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by Wuxi Unigroup Microelectronics pany. Features l Very low FOM RDS(on)×Qg l 100% avalanche tested l Easy to use/drive l Ro HS pliant Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) l Low Power Chargers and Adapters TO-252 TO-251 Device Marking and Package Information Device Package TO-252 TPU80R900M TO-251 Key Performance Parameters Parameter Value VDS @ Tj,max RDS(on),max Qg,typ ID,pulse EOSS @ 400V Body Diode di F/dt Marking 80R900M 80R900M Unit V Ω n C A A μJ A/μs V1.0 .tsinghuaicwx. TPD80R900M,TPU80R900M Wuxi Unigroup Microelectronics Co.,Ltd Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Continuous Drain Current Pulsed Drain Current TC = 25ºC TC = 100ºC Gate-Source Voltage Single Pulse Avalanche...