TPW65R075DFD Datasheet PDF

Unigroup TPW65R075DFD

The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by Wuxi Unigroup Microelectronics Company Features l Ultra-fast body diode l Very low FOM RDS(on)×Qg l Easy to use/drive l 100% avalanche tested l RoHS compliant TO-263 TO-220 Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) l LLC Half-bridge l Charger TO-247 Device Marking and Package...

Part No.	TPW65R075DFD
Datasheet	TPW65R075DFD Download
Manufacturer	Unigroup
Description	650V Super-junction Power MOSFET
Buy	Stock & Price

DESCRIPTION

650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by Wuxi Unigroup Microelectronics Company

FEATURES

l Ultra-fast body diode l Very low FOM RDS(on)×Qg l Easy to use/drive l 100% avalanche tested l RoHS compliant TO-263 TO-220

APPLICATIONS

l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) l LLC Half-bridge l Charger TO-247 Device Marking and Package Information Device Package TPB65R075DFD TO-263 TPP65R075DFD TO-220 TPW65R075DFD TO-247 Key Performance Parameters Parameter Value VDS @ Tj,max RDS(on),max 700 0.075 Qg,typ ID ID,pulse EOSS @ 400V trr Qrr 81 45 135 10.29 176 1.4 Irrm 16...