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TPW80R300C Datasheet PDF

Unigroup TPW80R300C

The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by Wuxi Unigroup Microelectronics Company.
Part No. TPW80R300C
Datasheet TPW80R300C Download
Manufacturer
Unigroup
Description 800V Super-junction Power MOSFET
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TPW80R300C datasheet page 1 preview

DESCRIPTION

800V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs,designed according to the SJ principle.

FEATURES

l Very low FOM RDS(on)×Qg l 100% avalanche tested l Easy to use/drive l RoHS compliant

APPLICATIONS

l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) l Low Power Chargers and Adapters TO-220F TO-263 TO-220 TO-247 Device Marking and Package Information Device Package TPA80R300C TO-220F TPB80R300C TO-263 TPP80R300C TO-220 TPW80R300C TO-247 Key Performance Parameters Parameter Value VDS @ Tj,max RDS(on),max Qg,typ ID ID,pulse 850 0.3 46 15 45 Marking 80R300C 80R300C 80R300C 80R300C Unit V Ω nC A A V1.0 1 TPA80R300C,TPB80R300C, TPP80R300C,TPW80R300C Wuxi Unigroup Microelectronics Co.,Ltd

ABSOLUTE MAXIMUM RATINGS

TC = 25ºC, unless otherwise noted Parameter Symbol Continuous Drain Current Pulsed Drain Current TC = 25ºC TC = 100ºC Gate-Source Voltage Single Pul...
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