TSB12N10A
TSB12N10A is 100V N-Channel DTMOS manufactured by Unigroup.
FEATURES
- Trench Power DTMOS Technology
- Low RDS(ON)
- Low Gate Charge
- Optimized for Fast-switching Applications
APPLICATIONS
- Synchronous Rectification in DC/DC and AC/DC Converters
- Isolated DC/DC Converters in Tele and Industrial
Device Marking and Package Information
Device
Package
Marking
TO-263
12N10A
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
Drain-Source Voltage (VGS = 0V) Continuous Drain Current
Pulsed Drain Current
(note1)
Gate-Source Voltage
Single Pulse Avalanche Energy
(note2)
Avalanche Current
(note1)
Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range
VDSS ID IDM
VGSS EAS IAs PD TJ, Tstg
100 55 220 ±20 20 20 56.5 -55~+175
Thermal Resistance
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol Rth JC Rth JA
Value 1.7 50
Unit V A A V m J A...
