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TSB12N10A Wuxi Unigroup Microelectronics Company
100V N-Channel DTMOS
FEATURES
Trench Power DTMOS Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications
APPLICATIONS
Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial
Device Marking and Package Information
Device
Package
Marking
TSB12N10A
TO-263
12N10A
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
Drain-Source Voltage (VGS = 0V) Continuous Drain Current
Pulsed Drain Current
(note1)
Gate-Source Voltage
Single Pulse Avalanche Energy
(note2)
Avalanche Current
(note1)
Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range
VDSS ID IDM
VGSS EAS IAs PD TJ, Tstg
100 55 220 ±
TSB12N10A Datasheet
