Datasheet Details
| Part number | TTB115N08AA |
|---|---|
| Manufacturer | Unigroup |
| File Size | 653.17 KB |
| Description | 85V N-Channel Trench MOSFET |
| Datasheet | TTB115N08AA-Unigroup.pdf |
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Overview: TTB115N08AA,TTP115N08AA Wuxi Unigroup Microelectronics CO.,LTD.
| Part number | TTB115N08AA |
|---|---|
| Manufacturer | Unigroup |
| File Size | 653.17 KB |
| Description | 85V N-Channel Trench MOSFET |
| Datasheet | TTB115N08AA-Unigroup.pdf |
|
|
|
Product Summary Trench Power technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications VDS ID (at VGS =10V) RDS(ON) (at VGS =10V) 85V 115A < 7.8mΩ Applications Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Tele and Industrial 100% UIS Tested TO-263 TO-220 Part Number TTB115N08AA TTP115N08AA Package Type TO-263 TO-220 Form Tape&Reel Tube Absolute Maximum Ratings (TA =25ºC unless otherwise noted) Parameter Symbol Maximum Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current B TC =25ºC TC =100ºC ID Pulsed Drain Current A IDM Avalanche Current A IAS Single Pulse Avalanche Energy L =0.3mH A EAS Power Dissipation C TC =25ºC PD TC =100ºC Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics 85 ±20 105 80 345 57 487 200 100 -55 to 175 Parameter Symbol Maximum Maximum Junction-to-Case Steady-State RƟJC Maximum Junction-to-Ambient Steady-State RƟJA V1.0 1 0.75 100 Marking TTB115N08AA TTP115N08AA Units V V A A A mJ W W ºC Units ºC/W .tsinghuaicwx.
TTB115N08AA,TTP115N08AA Wuxi Unigroup Microelectronics CO.,LTD.
Electrical Characteristics(TJ =25ºC unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID =250µA,VGS =0V 85 IDSS Zero Gate Voltage Drain Current VDS =85V, VGS =0V TJ =25ºC TJ =100ºC IGSS Gate-Body Leakage Current VDS =0V, VGS =±20V VGS(th) Gate Threshold Voltage VDS =VGS, ID =250µA 2 RDS(ON) Static Drain-Source On-Resistance VGS =10V, ID =30A gFS Forward Transconductance VDS =5V, ID =20A VSD Diode Forward Voltage IS =20A, VGS =0V IS Maximum Body-Diode Continuous Current B DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistanc
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