Datasheet Details
| Part number | TTB95N68A |
|---|---|
| Manufacturer | Unigroup |
| File Size | 965.77 KB |
| Description | 68V N-Channel Trench MOSFET |
| Datasheet | TTB95N68A-Unigroup.pdf |
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Overview: TTB95N68A,TTP95N68A Wuxi Unigroup Microelectronics CO.,LTD. 68V N-Channel Trench MOSFET.
| Part number | TTB95N68A |
|---|---|
| Manufacturer | Unigroup |
| File Size | 965.77 KB |
| Description | 68V N-Channel Trench MOSFET |
| Datasheet | TTB95N68A-Unigroup.pdf |
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Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications` Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 68V 95A < 7.5mΩ Applications Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Tele and Industrial 100% UIS Tested TO-263 TO-220 Device TTB95N68A TTP95N68A Package TO-263 TO-220 Form Tape&Reel Tube Absolute Maximum Ratings (TA =25ºC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current A TC = 25ºC TC = 100ºC Avalanche Current A Single Pulse Avalanche Energy L =0.3mH A Power Dissipation C TC = 25ºC TC = 100ºC Operating Junction and Storage Temperature Range VDS VGS ID IDM IAS EAS PD TJ, Tstg Thermal Characteristics Parameter Maximum Junction-to-Case Maximum Junction-to-Ambient Steady-State Steady-State Symbol RthJC RthJA V1.0 1 Marking 95N68A 95N68A Maximum 68 ±20 95 66 285 37 380 130.5 65.5 -55 to 175 Units V V A A A mJ W W ºC Maximum 1.15 100 Units ºC/W .tsinghuaicwx.
TTB95N68A,TTP95N68A Wuxi Unigroup Microelectronics CO.,LTD.
Electrical Characteristics(TJ =25ºC unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID =250µA,VGS =0V 68 IDSS Zero Gate Voltage Drain Current TJ =25ºC -- VDS =68V, VGS =0V TJ =100ºC -- IGSS Gate-Body Leakage Current VDS =0V, VGS =±20V -- VGS(th) Gate Threshold Voltage VDS =VGS, ID =250µA 2 RDS(ON) Static Drain-Source On-Resistance VGS =10V, ID =30A -- gFS Forward Transconductance VDS = 5V, ID =20A -- VSD Diode Forward Voltage IS =20A, VGS =0V -- IS Maximum Body-Diode Continuous Current B -- DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING PARAMETERS -- VGS =0
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