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TTD90N03AT - 30V N-Channel Trench MOSFET

Features

  • Trench Power Technology.
  • Low RDS(ON).
  • Low Gate Charge.
  • Optimized for Fast-switching.

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Datasheet preview – TTD90N03AT

Datasheet Details

Part number TTD90N03AT
Manufacturer Unigroup
File Size 632.01 KB
Description 30V N-Channel Trench MOSFET
Datasheet download datasheet TTD90N03AT Datasheet
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Full PDF Text Transcription

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TTD90N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) Features  Trench Power Technology  Low RDS(ON)  Low Gate Charge  Optimized for Fast-switching Applications Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) ID (at VGS=10V) 100% UIS Tested 30V < 5mΩ < 7mΩ 90A TO-252 Device TTD90N03AT Package TO-252 Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage (VGS = 0V) Continuous Drain Current B Pulsed Drain Current A TC = 25ºC TC = 100ºC Gate-Source Voltage Single Pulse Avalanche Energy L =0.
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