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TTD95N68A,TTU95N68A Wuxi Unigroup Microelectronics CO.,LTD.
68V N-Channel Trench MOSFET(Preliminary)
General Description
Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications`
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
68V 95A < 7.5mΩ
Applications
Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
TO-251
TO-252
Device TTD95N68A TTU95N68A
Package TO-252 TO-251
Form Tape&Reel Tape&Reel
Absolute Maximum Ratings (TA =25ºC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current A
TC = 25ºC TC = 100ºC
Avalanche Current A
Single Pulse Avalanche Energy L =0.