TTE01P10AT
TTE01P10AT is P-Channel Trench MOSFET manufactured by Unigroup.
FEATURES
- Trench Power MOSFET Technology
- Low RDS(ON)
- Low Gate Charge
- Optimized For Fast-switching Applications
APPLICATIONS
- Load Switches
- Battery Switch
TO-251-SL
Device Marking and Package Information
Device
Package
TO-251-SL
Marking 01P10AT
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range
(note1)
(note2) (note1)
VDSS ID IDM
VGSS EAS IAR PD TJ, Tstg
Value -100 -1.5
-6 ±20 0.8
-2 1.5 -55~+175
Unit V A A V m J A W ºC
Thermal Resistance
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol Rth JC Rth JA
Value 20 60
Unit K/W
V1.0
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TTE01P10AT...
