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TTP120N03AT - 30V N-Channel Trench MOSFET

Features

  • Trench Power MOSFET Technology.
  • Low RDS(ON).
  • Low Gate Charge.
  • Optimized For Fast-switching.

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Datasheet preview – TTP120N03AT

Datasheet Details

Part number TTP120N03AT
Manufacturer Unigroup
File Size 449.91 KB
Description 30V N-Channel Trench MOSFET
Datasheet download datasheet TTP120N03AT Datasheet
Additional preview pages of the TTP120N03AT datasheet.

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Full PDF Text Transcription

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TTD120N03AT, TTP120N03AT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES  Trench Power MOSFET Technology  Low RDS(ON)  Low Gate Charge  Optimized For Fast-switching Applications APPLICATIONS  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Package TTP120N03AT TO-220 TTD120N03AT TO-252 Marking 120N03AT 120N03AT Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range (note1) (note2) (note1) VDSS ID
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