Datasheet4U Logo Datasheet4U.com

TTP80N04AT - N-Channel Trench MOSFET

Features

  • Trench Power MOSFET Technology.
  • Low RDS(ON).
  • Low Gate Charge.
  • Optimized For Fast-switching.

📥 Download Datasheet

Datasheet preview – TTP80N04AT

Datasheet Details

Part number TTP80N04AT
Manufacturer Unigroup
File Size 449.34 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet TTP80N04AT Datasheet
Additional preview pages of the TTP80N04AT datasheet.

📁 Similar Datasheet

  • TTP-1757B-T1C - MATERIAL SAFETY (ETC)
  • TTP103 - CMOS TECHNOLOGY PREMITTED TO DESIGN TOGGLE OUTPUT (TONTEK)
  • TTP112 - CONTINUOUS TOUCH DIMMER (TONTEK)
  • TTP117 - TOUCH DIMMER (TONTEK)
  • TTP118-DB8 - 1 Key Touch PAD Detector (TONTEK)
  • TTP222 - 8 KEYS TOUCH PAD DETECTOR IC (TONTEK)
  • TTP223 - 1 KEY TOUCH PAD DETECTOR (TT)
  • TTP223 - 1 KEY TOUCH PAD DETECTOR (TONTEK)
  • TTP223-BA6 - 1 KEY TOUCH PAD DETECTOR (TONTEK)
  • TTP223-BA6 - 1 KEY TOUCH PAD DETECTOR (TT)
Other Datasheets by Unigroup

Full PDF Text Transcription

Click to expand full text
TTD80N04AT, TTP80N04AT Wuxi Unigroup Microelectronics Company 40V N-Channel Trench MOSFET FEATURES  Trench Power MOSFET Technology  Low RDS(ON)  Low Gate Charge  Optimized For Fast-switching Applications APPLICATIONS  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Package TTD80N04AT TO-252 TTP80N04AT TO-220 Marking 80N04AT 80N04AT Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value TO-252 TO-220 Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range (note1) (note2)
Published: |