Unigroup TTP80N04AT
N-Channel Trench MOSFET
FEATURES
● Trench Power MOSFET Technology● Low RDS(ON)
● Low Gate Charge
● Optimized For Fast-switching
APPLICATIONS
APPLICATIONS
● Synchronous Rectification in DC/DC and AC/DC Converters● Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Package TTD80N04AT TO-252 TTP80N04AT TO-220 Marking 80N04AT 80N04AT
ABSOLUTE MAXIMUM RATINGS
TC = 25ºC, unless otherwise noted Parameter Symbol Value TO-252 TO-220 Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range (note1) (note2) VDSS ID IDM VGSS EAS IAs PD TJ, Tstg 40 80 320 ±20 78 22 120 -55~+175 Unit V A A V mJ A W ºC Thermal Resistance Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, J