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UM8120DA - 20V N-Channel Power MOSFET

General Description

The UM8120DA is a low threshold N-channel MOSFET with extremely low on-resistance.

This benefit provides the designer with an excellent efficient device for use in battery and load management applications.

The device is available in a space-saving, small-outline DFN3 1.0×0.6 package.

Key Features

  • z Load Switch z Battery Packs z Battery-Powered Portable Equipments z Cellular and Cordless Telephones z Drain-Source Voltage (Max): 20V z Low On-Resistance: 160mΩ@VGS=4.5V,ID=0.6A 210mΩ@VGS=2.5V,ID=0.3A 270mΩ@VGS=1.8V,ID=0.2A z Continuous Drain Current (Max): 0.6A@25°C Pin Configurations Top View (Top View) M: Month Code UM8120DA SLP1006P3 Ordering Information Part Number Packaging Type UM8120DA DFN3 1.0×0.6 Marking Code E8 Shipping Qty 10000pcs/7 Inch Tape & Reel ________________.

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Datasheet Details

Part number UM8120DA
Manufacturer Union Semiconductor
File Size 122.19 KB
Description 20V N-Channel Power MOSFET
Datasheet download datasheet UM8120DA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UM8120DA 20V N-Channel Power MOSFET UM8120DA DFN3 1.0×0.6 General Description The UM8120DA is a low threshold N-channel MOSFET with extremely low on-resistance. This benefit provides the designer with an excellent efficient device for use in battery and load management applications. The device is available in a space-saving, small-outline DFN3 1.0×0.6 package. Applications Features z Load Switch z Battery Packs z Battery-Powered Portable Equipments z Cellular and Cordless Telephones z Drain-Source Voltage (Max): 20V z Low On-Resistance: 160mΩ@VGS=4.5V,ID=0.6A 210mΩ@VGS=2.5V,ID=0.3A 270mΩ@VGS=1.8V,ID=0.2A z Continuous Drain Current (Max): 0.