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UM8516 - 20V P-Channel Power MOSFET

General Description

The UM8516 is a low threshold P-channel MOSFET with gate to source TVS protection, have extremely low on-resistance.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

Key Features

  • z Drain-Source Voltage (Max): -20V z Low On-Resistance: 65mΩ@VGS=-4.5V 75mΩ@VGS=-2.5V z Continuous Drain Current (Max): -4A@25°C Pin Configurations Top View XX: Week Code UM8516 SOT23-6 Ordering Information Part Number Packaging Type UM8516 SOT23-6 Marking Code UCN Shipping Qty 3000pcs/7 Inch Tape & Reel Absolute Maximum Ratings Symbol VDSS VGS ID IDM PD TJ Tstg RθJA Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current Pulsed Power Dissipation Ju.

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Datasheet Details

Part number UM8516
Manufacturer Union Semiconductor
File Size 190.77 KB
Description 20V P-Channel Power MOSFET
Datasheet download datasheet UM8516 Datasheet

Full PDF Text Transcription for UM8516 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UM8516. For precise diagrams, and layout, please refer to the original PDF.

UM8516 20V P-Channel Power MOSFET UM8516 SOT23-6 General Description The UM8516 is a low threshold P-channel MOSFET with gate to source TVS protection, have extremely low...

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-channel MOSFET with gate to source TVS protection, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The devices use a space-saving, small-outline SOT23-6 package. Applications z Battery Packs z Battery-Powered Portable Equipment z Cellular and Cordless Telephones Features z Drain-Source Voltage (Max): -20V z Low On-Resistance: 65mΩ@VGS=-4.5V 75mΩ@VGS=-2.