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11N90 - N-CHANNEL POWER MOSFET

General Description

The UTC 11N90 is a N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology.

This technology specializes in allowing a minimum on-state resistance and superior switching performance.

Key Features

  • RDS(on) < 1.1Ω @ VGS = 10V, ID = 5.5A.
  • High switching speed.
  • Improved dv/dt capability.
  • 100% avalanche tested.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 11N90 11A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N90 is a N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N90 is universally applied in high efficiency switch mode power supply,  FEATURES * RDS(on) < 1.1Ω @ VGS = 10V, ID = 5.