19N10 Overview
Power MOSFET The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and mutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching...
19N10 Key Features
- RDS(ON) = 0.1Ω @VGS = 10 V
- Ultra low gate charge ( typical 19nC )
- Low reverse transfer Capacitance ( CRSS = typical 32pF )
- Fast switching capability
- Avalanche energy Specified
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION