19N10 - N-CHANNEL POWER MOSFET

Product Overview

Unisonic Technologies

Datasheet Details

Part number	19N10
Manufacturer	Unisonic Technologies
File Size	253.33 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	19N10 Datasheet
Additional preview pages of the 19N10 datasheet.

Product details

Description

Power MOSFET The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse.They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Features

RDS(ON) = 0.1Ω @VGS = 10 V.
Ultra low gate charge ( typical 19nC ).
Low reverse transfer Capacitance ( CRSS = typical 32pF ).
Fast switching capability.
Avalanche energy Specified.
Improved dv/dt capability, high ruggedness.
SYMBOL 2.Drain 1.Gate 3.Source.

📁 Similar Datasheet

19N10V - 100V N-Channel MOSFET (UNISONIC TECHNOLOGIES)
19N20 - N-Channel MOSFET (INCHANGE)
19N20C - FQA19N20C (Fairchild Semiconductor)
19N3LLH6 - N-channel Power MOSFET (STMicroelectronics)
19N60M6 - N-Channel Power MOSFET (STMicroelectronics)
19N65M5 - N-channel Power MOSFET (STMicroelectronics)
19NF20 - N-CHANNEL Power MOSFET (STMicroelectronics)
19NM50N - N-Channel MOSFET (STMicroelectronics)

Other Datasheets by Unisonic Technologies

Published: May 1, 2011 |