Description
Power MOSFET
The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and wi
Features
- RDS(ON) = 0.1Ω @VGS = 10 V.
- Ultra low gate charge ( typical 19nC ).
- Low reverse transfer Capacitance ( CRSS = typical 32pF ).
- Fast switching capability.
- Avalanche energy Specified.
- Improved dv/dt capability, high ruggedness.
- SYMBOL
2.Drain
1.Gate
3.Source.
19N10 Datasheet
