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19N10 - N-CHANNEL POWER MOSFET

General Description

Power MOSFET The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and wi

Key Features

  • RDS(ON) = 0.1Ω @VGS = 10 V.
  • Ultra low gate charge ( typical 19nC ).
  • Low reverse transfer Capacitance ( CRSS = typical 32pF ).
  • Fast switching capability.
  • Avalanche energy Specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 2.Drain 1.Gate 3.Source.

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Other Datasheets by Unisonic Technologies

Part Number Description
19N10V 100V N-Channel MOSFET

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UNISONIC TECHNOLOGIES CO., LTD 19N10 100V N-Channel MOSFET „ DESCRIPTION Power MOSFET The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. „ FEATURES * RDS(ON) = 0.1Ω @VGS = 10 V * Ultra low gate charge ( typical 19nC ) * Low reverse transfer Capacitance ( CRSS = typical 32pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness „ SYMBOL 2.