1N60Z
DESCRIPTION
The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
- FEATURES
- RDS(ON) <11.5Ω@ VGS=10V, ID=0.6A
- Ultra Low gate charge (typical 5.0n C)
- Low reverse transfer capacitance (CRSS = typical 3.0 p F)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
- 1N60ZG-AA3-R
1N60ZL-T92-B
1N60ZG-T92-B
1N60ZL-T92-K
1N60ZG-T92-K
1N60ZL-TN3-R
1N60ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-223 TO-92 TO-92 TO-252
Pin Assignment 123 GDS GDS GDS GDS
Packing
Tape Reel Tape Box
Bulk Tape...
