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2N7002DW - DUAL N-CHANNEL POWER MOSFET

General Description

The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • High Density Cell Design for Low RDS(ON).
  • Voltage Controlled Small Signal Switch.
  • Rugged and Reliable.
  • High Saturation Current Capability.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 2N7002DW 300mA, 60V DUAL N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Package 2N7002DWG-AL6-R SOT-363 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123456 S1 G1 D2 S2 G2 D1 Packing Tape Reel  MARKING 3PG www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-534.