Datasheet4U Logo Datasheet4U.com

4N80 - N-CHANNEL POWER MOSFET

General Description

The UTC 4N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers planar stripe and DMOS technology.

This technology is specialized in allowing a minimum on-state resistance, and superior switching performance.

Key Features

  • RDS(on) < 3.0Ω @ VGS=10V, ID=2.0A.
  • High switching speed.
  • Improved dv/dt capability.
  • 100% avalanche tested.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source www. unisonic. com. tw Copyright © 2016 Unisonic Technologies Co. , Ltd 1 of 7 QW-R502-505.I 4N80.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
4N80 N-Channel MOSFET Transistor Inchange Semiconductor
4N80 N-Channel Power MOSFET nELL
4N80-FC N-CHANNEL POWER MOSFET UTC
4N80-FCQ 800V N-CHANNEL POWER MOSFET UTC
4N80E MTB4N80E Motorola

Other Datasheets by Unisonic Technologies

Part Number Description
4N80-N N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 4N80 4.0A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 4N80 is universally applied in high efficiency switch mode power supply.  FEATURES * RDS(on) < 3.0Ω @ VGS=10V, ID=2.0A * High switching speed * Improved dv/dt capability * 100% avalanche tested  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-505.