6N90 Description
The UTC 6N90 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and mutation mode.
6N90 Key Features
- RDS(ON) ≤ 1.75 Ω @ VGS=10V, ID=3.1A
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- SYMBOL
- ORDERING INFORMATION
- MARKING