6N90 - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC 6N90 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology.

This technology allows a minimum on-state resistance and superior switching performance.

Features

RDS(ON) ≤ 1.75 Ω @ VGS=10V, ID=3.1A.
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source www. unisonic. com. tw Copyright © 2023 Unisonic Technologies Co. , Ltd 1 of 9 QW-R502-492.N 6N90 Power MOSFET.

Unisonic Technologies

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Datasheet Details

Part number	6N90
Manufacturer	Unisonic Technologies
File Size	537.69 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	6N90 Datasheet
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UNISONIC TECHNOLOGIES CO., LTD 6N90 6.2A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N90 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 6N90 is generally applied in high efficiency switch mode power supplies.  FEATURES * RDS(ON) ≤ 1.75 Ω @ VGS=10V, ID=3.1A * Fast switching * 100% avalanche tested * Improved dv/dt capability  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-492.

Published: Sep 28, 2011 |