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6N90 - N-CHANNEL POWER MOSFET

General Description

The UTC 6N90 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology.

This technology allows a minimum on-state resistance and superior switching performance.

Key Features

  • RDS(ON) ≤ 1.75 Ω @ VGS=10V, ID=3.1A.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source www. unisonic. com. tw Copyright © 2023 Unisonic Technologies Co. , Ltd 1 of 9 QW-R502-492.N 6N90 Power MOSFET.

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Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD 6N90 6.2A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N90 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 6N90 is generally applied in high efficiency switch mode power supplies.  FEATURES * RDS(ON) ≤ 1.75 Ω @ VGS=10V, ID=3.1A * Fast switching * 100% avalanche tested * Improved dv/dt capability  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-492.