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6NM65-Q - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC 6NM65-Q is a Super Junction MOSFET Structure.

It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance.

Features

  • S.
  • RDS(on) < 1.08 Ω @ VGS=10V, ID=3A.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% avalanche tested.
  • SYMBOL Power MOSFET.

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Datasheet preview – 6NM65-Q

Datasheet Details

Part number 6NM65-Q
Manufacturer Unisonic Technologies
File Size 225.35 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 6NM65-Q Datasheet
Additional preview pages of the 6NM65-Q datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 6NM65-Q Preliminary 6A, 650V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 6NM65-Q is a Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 6NM65-Q is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.  FEATURES * RDS(on) < 1.
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