Part D313
Description NPN Epitaxial Planar Transistor
Category Transistor
Manufacturer Unisonic Technologies
Size 87.89 KB
Unisonic Technologies

D313 Overview

Description

The UTC D313 is designed for use in general purpose amplifier and switching applications. 1 TO-220 1:BASE 2:COLLECTOR 3:EMITTER PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Storage Temperature Junction Temperature SYMBOL VCBO VCEO VEBO Ic TSTG Tj VALUE 60 60 5 3 -55 ~ +150 150 UNIT V V V A °C °C PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter On voltage DC Current Gain SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) VBE(ON) hFE TEST CONDITIONS IC=1mA IC=10mA IE=100uA VCB=20V, IE=0 VEB=4V, IC=0 IC=2A, IB=0.2A VCE=2V, IC=1A IC=1A, VCE=2V IC=0.1A,VCE=2V MIN 60 60 5 TYP MAX UNIT V V V 0.1 1.0 1.0 1.5 40 40 320 mA mA V V CLASSIFICATION ON hFE RANK RANGE C 40-80 D 60-120 E 100-200 F 160-320 UTC UNISONIC TECHNOLOGIES CO., LTD.