TUL1102 Description
The TUL1102 is manufactured which is using high voltage Multi Epitaxial Planar technology for high voltage capability and high switching speeds. For enhancing switching speeds while maintaining a wide RBSOA, the TUL1102 uses a Cellular Emitter structure with planar edge termination. Because of an increased intermediate layer which has an intrinsic ruggedness, and it enables the transistor to withstand a high...
TUL1102 Key Features
- High voltage
- Dynamic parameters: low spread
- For reliable operation: minimum lot-to-lot spread
- High switching speed
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