TUL1102 - NPN SILICON TRANSISTOR

Description

The TUL1102 is manufactured which is using high voltage Multi Epitaxial Planar technology for high voltage capability and high switching speeds.

For enhancing switching speeds while maintaining a wide RBSOA, the TUL1102 uses a Cellular Emitter structure with planar edge termination.

Features

S.
High voltage.
Dynamic parameters: low spread.
For reliable operation: minimum lot-to-lot spread.
High switching speed.

Unisonic Technologies

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Datasheet Details

Part number	TUL1102
Manufacturer	Unisonic Technologies
File Size	270.19 KB
Description	NPN SILICON TRANSISTOR
Datasheet	TUL1102 Datasheet
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UNISONIC TECHNOLOGIES CO., LTD TUL1102 NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The TUL1102 is manufactured which is using high voltage Multi Epitaxial Planar technology for high voltage capability and high switching speeds. For enhancing switching speeds while maintaining a wide RBSOA, the TUL1102 uses a Cellular Emitter structure with planar edge termination. Because of an increased intermediate layer which has an intrinsic ruggedness, and it enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection.

Published: Feb 27, 2016 |