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UDN302 - Power MOSFET

Datasheet Summary

Description

The UDN302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S.
  • RDS(ON)=55mΩ @ VGS=-4.5V.
  • RDS(ON)=80mΩ @ VGS=-2.5V.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 3.Drain Power MOSFET 2.Gate 1.Source.

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Datasheet Details

Part number UDN302
Manufacturer Unisonic Technologies
File Size 197.31 KB
Description Power MOSFET
Datasheet download datasheet UDN302 Datasheet
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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UDN302 P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET „ DESCRIPTION The UDN302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON)=55mΩ @ VGS=-4.5V * RDS(ON)=80mΩ @ VGS=-2.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 3.Drain Power MOSFET 2.Gate 1.Source „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UDN302L-AE3-R UDN302G-AE3-R Package SOT-23 Pin Assignment 123 SGD Packing Tape Reel „ MARKING NC03 L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-278.
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