UF3N30 - 300V N-CHANNEL POWER MOSFET

Unisonic Technologies

General Description

The UTC UF3N30 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance.

Key Features

RDS(ON).

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UF3N30 300v n-channel power mosfet by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	UF3N30
Manufacturer	Unisonic Technologies
File Size	185.64 KB
Description	300V N-CHANNEL POWER MOSFET
Datasheet	UF3N30 Datasheet

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Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD UF3N30 Preliminary Power MOSFET 3A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF3N30 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * RDS(ON)<2Ω @ VGS=10V, ID=3A * High switching speed * Typically 4nC low gate charge * 100% avalanche tested SYMBOL www.DataSheet.net/ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF3N30L-TM3-R UF3N30G-TM3-R Package TO-251 TO-252 S: Source 1 G G Pin Assignment 2 3 D S D S Packing Tape Reel Tape Reel UF3N30L-TN3-R UF3N30G- TN3-R Note: Pin Assignment: G: Gate D: Drain www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co.