UF3N30 Description
The UTC UF3N30 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance.
UF3N30 Key Features
- RDS(ON)<2Ω @ VGS=10V, ID=3A
- High switching speed
- Typically 4nC low gate charge
- 100% avalanche tested
- SYMBOL
- ORDERING INFORMATION
- http://..co.kr/
- PARAMETER Drain-Source Voltage Gate-Source Voltage