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UF740-E - N-CHANNEL POWER MOSFET

General Description

The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Key Features

  • 10A, 400V, RDS(ON)(0.55Ω).
  • Single Pulse Avalanche Energy Rated.
  • Rugged - SOA is Power Dissipation Limited.
  • Fast Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance 1 TO-220 1 TO-220F1 1 1 TO-220F 1 TO-220F2 TO-263.
  • SYMBOL.

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Full PDF Text Transcription for UF740-E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UF740-E. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UF740-E Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is desi...

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PTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.  FEATURES * 10A, 400V, RDS(ON)(0.