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UG25N120 - NPT TRENCH IGBT

Datasheet Summary

Description

The UTC UG25N120 is an NPT ignition Insulated Gate Bipolar Transistor.

it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation voltage and low switching loss, etc.

Features

  • High switching speed.
  • High avalanche ruggedness.
  • Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C.
  • Low switching loss: Eoff, typ=0.96mJ @ IC=25A and TC=25°C.
  • SYMBOL.

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Datasheet preview – UG25N120

Datasheet Details

Part number UG25N120
Manufacturer Unisonic Technologies
File Size 147.54 KB
Description NPT TRENCH IGBT
Datasheet download datasheet UG25N120 Datasheet
Additional preview pages of the UG25N120 datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT  DESCRIPTION The UTC UG25N120 is an NPT ignition Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation voltage and low switching loss, etc. The UTC UG25N120 is suitable for the resonant or soft switching applications.  FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C * Low switching loss: Eoff, typ=0.
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