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UP9T15G - N-CHANNEL POWER MOSFET

General Description

The UP9T15G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • VDS(V)=20V.
  • ID=12 .5A (VGS=4.5V).
  • RDS(ON) < 50mΩ @ VGS =4.5 V, ID =6 A.
  • RDS(ON) < 80mΩ @ VGS =2.5 V, ID =5.2 A.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Other Datasheets by Unisonic Technologies

Part Number Description
UP9971 N-CHANNEL POWER MOSFET
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UP9T15G N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UP9T15G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * VDS(V)=20V * ID=12 .5A (VGS=4.5V) * RDS(ON) < 50mΩ @ VGS =4.5 V, ID =6 A * RDS(ON) < 80mΩ @ VGS =2.5 V, ID =5.2 A  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UP9T15GL-TN3-R UP9T15GP-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GD S Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-208.