UT108N03
DESCRIPTION
As advanced N-channel level power MOSFET, the UT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance.
- FEATURES
- RDS(ON) < 5.3mΩ @VGS = 10 V, ID = 25 A
- Low Capacitance
- Optimized Gate Charge
- Fast Switching Capability
- Avalanche Energy Specified
- SYMBOL
2.Drain
1 TO-220
1 TO-252
1 TO-251
1 TO-252D
1.Gate
3.Source
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT108N03L-TA3-T
UT108N03G-TA3-T
UT108N03L-TM3-T
UT108N03G-TM3-T
UT108N03L-TN3-R
UT108N03G-TN3-R
UT108N03L-TND-R
UT108N03G-TND-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-251 TO-252 TO-252D
Pin Assignment 123 GDS GDS GDS GDS
Packing
Tube Tube Tape Reel Tape Reel
UT108N03L-TA3-T
(1)Packing Type
(1) R: Tape Reel, T: Tube (2) TA3: TO-220, TM3: TO-251, TN3: TO-252
(2)Package Type
TND: TO-252D
(3)Green...
