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UT2321 - P-Channel MOSFET

General Description

The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • ES.
  • RDS(ON).

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Full PDF Text Transcription for UT2321 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UT2321. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UT2321 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION Power MOSFET The UT2321 uses advanced trench technology to provide ...

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ON Power MOSFET The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON)<55mΩ @VGS=-4.5V * RDS(ON)<80mΩ @VGS=-2.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 3.Drain www.DataSheet.net/ 2.Gate 1.Source „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2321L-AE3-R UT2321G-AE3-R Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel „ MARKING 231 L: Lead Free G: Halogen Free 1 of 4 QW-R50

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