UT6898 - N-CHANNEL ENHANCEMENT Power MOSFET

Datasheet Summary

Description

The UT6898 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

S.
RDS(ON) ≤ 14 mΩ @ VGS=4.5V, ID=9.4A.
RDS(ON) ≤ 18 mΩ @ VGS=2.5V, ID=8.3A.
Low capacitance.
Low gate charge.
Fast switching capability.
Avalanche energy specified.
SYMBOL (7) (8) D1 (5) (6) D2 (2) (4) G1 G2 Power MOSFET SOP-8 S1 S2 (1) (3).

Unisonic Technologies

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Datasheet Details

Part number	UT6898
Manufacturer	Unisonic Technologies
File Size	351.46 KB
Description	N-CHANNEL ENHANCEMENT Power MOSFET
Datasheet	UT6898 Datasheet
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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UT6898 N-CHANNEL ENHANCEMENT  DESCRIPTION The UT6898 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 14 mΩ @ VGS=4.5V, ID=9.4A * RDS(ON) ≤ 18 mΩ @ VGS=2.5V, ID=8.

Published: Feb 1, 2016 |