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UT6898 - N-CHANNEL ENHANCEMENT Power MOSFET

General Description

The UT6898 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) ≤ 14 mΩ @ VGS=4.5V, ID=9.4A.
  • RDS(ON) ≤ 18 mΩ @ VGS=2.5V, ID=8.3A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL (7) (8) D1 (5) (6) D2 (2) (4) G1 G2 Power MOSFET SOP-8 S1 S2 (1) (3).

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UNISONIC TECHNOLOGIES CO., LTD UT6898 N-CHANNEL ENHANCEMENT  DESCRIPTION The UT6898 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 14 mΩ @ VGS=4.5V, ID=9.4A * RDS(ON) ≤ 18 mΩ @ VGS=2.5V, ID=8.