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UTC4N65 - N-CHANNEL POWER MOSFET

General Description

The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic.

Key Features

  • S.
  • RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2015 Unisonic Technologies Co. , Ltd 1 of 9 QW-R502-397.N 4N65 Power MOSFET.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 4N65 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-397.