Datasheet4U Logo Datasheet4U.com

UTD36N03 - N-CHANNEL ENHANCEMENT MODE Power MOSFET

Datasheet Summary

Features

  • S.
  • RDS(ON) < 17mΩ @VGS = 10 V.
  • Low capacitance.
  • Optimized gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

📥 Download Datasheet

Datasheet preview – UTD36N03

Datasheet Details

Part number UTD36N03
Manufacturer Unisonic Technologies
File Size 282.46 KB
Description N-CHANNEL ENHANCEMENT MODE Power MOSFET
Datasheet download datasheet UTD36N03 Datasheet
Additional preview pages of the UTD36N03 datasheet.

📁 Similar Datasheet

  • UTD351 - N-CHANNEL MOSFET (UTC)
  • UTD02R075 - N-CHANNEL MOSFET (UTC)
  • UTD405 - P-CHANNEL MOSFET (UTC)
  • UTD413 - P-CHANNEL MOSFET (UTC)
  • UTD452 - N-CHANNEL ENHANCEMENT MODE Power MOSFET (UTC)
  • UTD484 - N-CHANNEL MOSFET (UTC)
Other Datasheets by Unisonic Technologies

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD UTD36N03 N-CHANNEL ENHANCEMENT MODE  FEATURES * RDS(ON) < 17mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTD36N03L-TA3-T UTD36N03G-TA3-T UTD36N03L-TN3-T UTD36N03G-TN3-T UTD36N03L-TN3-R UTD36N03G-TN3-R Package TO-220 TO-252 TO-252 Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-179.
Published: |