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UTM2054 - Power MOSFET

General Description

The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON)= 35mΩ @VGS=10V.
  • RDS(ON)= 45mΩ @VGS=4.5V.
  • RDS(ON)= 110mΩ @VGS=2.5V.
  • Ultra low gate charge ( typical 11.5 nC ).
  • Low reverse transfer capacitance ( CRSS = typical 60 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription for UTM2054 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UTM2054. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UTM2054 N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge ...

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anced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON)= 35mΩ @VGS=10V * RDS(ON)= 45mΩ @VGS=4.5V * RDS(ON)= 110mΩ @VGS=2.5V * Ultra low gate charge ( typical 11.

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