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UTT30N06 - N-CHANNEL POWER MOSFET

General Description

The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics.

Key Features

  • S.
  • RDS(ON) ≤ 22 mΩ @ VGS=10V, ID=15A RDS(ON) ≤ 30 mΩ @ VGS=4.5V, ID=15A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2023 Unisonic Technologies Co. , Ltd 1 of 9 QW-R502-637.H UTT30N06 Power MOSFET.

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Full PDF Text Transcription for UTT30N06 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UTT30N06. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UTT30N06 30A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better charac...

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06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used in automotive applications of power supplies, high efficient DC to DC converters and battery operated products.  FEATURES * RDS(ON) ≤ 22 mΩ @ VGS=10V, ID=15A RDS(ON) ≤ 30 mΩ @ VGS=4.5V, ID=15A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-637.