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UTT4407 - P-CHANNEL POWER MOSFET

General Description

The UTC UTT4407 is universally applied in PWM or used as a load switch.

Key Features

  • VDS(V) = -30V.
  • ID = -12A (VGS=-20V).
  • RDS(ON) < 13mΩ @ VGS = -20V, ID = -10A RDS(ON) < 14mΩ @ VGS = -4.5V, ID = -10A.
  • SYMBOL Drain Power MOSFET Gate Source P-.

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Full PDF Text Transcription for UTT4407 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UTT4407. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UTT4407 Preliminary P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UTT4407 is a P-channel enhancement mode power MOSFET usin...

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TION The UTC UTT4407 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 25V gate rating The UTC UTT4407 is universally applied in PWM or used as a load switch.  FEATURES * VDS(V) = -30V * ID = -12A (VGS=-20V) * RDS(ON) < 13mΩ @ VGS = -20V, ID = -10A RDS(ON) < 14mΩ @ VGS = -4.

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