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UTT6N10 - 6A N-CHANNEL POWER MOSFET

General Description

The UTC UTT6N10 is a N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low gate charge.

The UTC UTT6N10 is usually used in DC-DC Conversion.

Key Features

  • RDS(on) ≤ 175 mΩ @ VGS=10V, ID=3.0A RDS(on) ≤ 200 mΩ @ VGS=4.5V, ID=1.0A.
  • High Switching Speed.
  • SYMBOL 2.Drain 1 TO-252 1 SOT-223 1.Gate 3.Source.

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Full PDF Text Transcription for UTT6N10 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UTT6N10. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UTT6N10 6A, 100V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC UTT6N10 is a N-channel enhancement mode Power FET, it uses UTC’s...

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e UTC UTT6N10 is a N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low gate charge. The UTC UTT6N10 is usually used in DC-DC Conversion.  FEATURES * RDS(on) ≤ 175 mΩ @ VGS=10V, ID=3.0A RDS(on) ≤ 200 mΩ @ VGS=4.5V, ID=1.0A * High Switching Speed  SYMBOL 2.Drain 1 TO-252 1 SOT-223 1.Gate 3.

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