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UTT6N10 Datasheet

Manufacturer: Unisonic Technologies
UTT6N10 datasheet preview

UTT6N10 Details

Part number UTT6N10
Datasheet UTT6N10-UnisonicTechnologies.pdf
File Size 229.44 KB
Manufacturer Unisonic Technologies
Description 6A N-CHANNEL POWER MOSFET
UTT6N10 page 2 UTT6N10 page 3

UTT6N10 Overview

The UTC UTT6N10 is a N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low gate charge. The UTC UTT6N10 is usually used in DC-DC Conversion.

UTT6N10 Key Features

  • RDS(on) ≤ 175 mΩ @ VGS=10V, ID=3.0A RDS(on) ≤ 200 mΩ @ VGS=4.5V, ID=1.0A
  • High Switching Speed
  • SYMBOL
  • ORDERING INFORMATION
  • MARKING

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