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UTT80N06 - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC UTT80N06 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and high switching speed.

It can also withstand high energy pluse in the avalanche and commutation mode.

Features

  • RDS(ON)< 10mΩ @ VGS=10V.
  • High switching speed.
  • Improved dv/dt capability.
  • Low Crss(typical 145pF).
  • Low Gate Charge(typical 57nC).
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Datasheet Details

Part number UTT80N06
Manufacturer Unisonic Technologies
File Size 229.13 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet UTT80N06 Datasheet
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UNISONIC TECHNOLOGIES CO., LTD UTT80N06 Preliminary 60V, 80A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT80N06 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and high switching speed. It can also withstand high energy pluse in the avalanche and commutation mode. The UTC UTT80N06 is suitable for active power factor correction, high efficient switched mode power supplies and electronic lamp ballast based on half bridge topology, etc.  FEATURES * RDS(ON)< 10mΩ @ VGS=10V * High switching speed * Improved dv/dt capability * Low Crss(typical 145pF) * Low Gate Charge(typical 57nC)  SYMBOL 2.Drain Power MOSFET 1.Gate 3.
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